SPT chip (Soft-punch-through technology)
MOS input control
Ultra thin IGBT chip, great current, low oss, low tail current
Low VCE(SAT) with positive temperature coefficent
High switch frequency, low switch loss
High SC resistive ability
Optimum EMC property
Long creepage distance
DBC insulated voltage = 2,500V RMS
‘Vacuum + H2’ process gas atmosphere, nearly voidless soldering results
Ultrasonic scan technique, assure soldering quality
Type | IGBT | Diode | Outline | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
IC @TC= 80℃ A | VCES V | VGES V | VGE(TH) V | VISO V | Tvj ℃ | IF @TC= 80℃ A | IFRM @TC= 80℃ A | IFSM @TC= 125℃ A | trr ns | ||
SGG50-12CS1 | 50 | 1200 | ±20 | 4.5-7.5 | 2500 | 150 | 50 | 100 | 500 | 400 | WI-1 |
SGG50-12RS1 | |||||||||||
SGG50-12LS1 | |||||||||||
SGG75-12CS1 | 75 | 1200 | ±20 | 4.5-7.5 | 2500 | 150 | 75 | 150 | 700 | 200 | WI-1 |
SGG75-12RS1 | |||||||||||
SGG75-12LS1 | |||||||||||
SGG100-12CS1 | 100 | 1200 | ±20 | 4.5-7.5 | 2500 | 150 | 95 | 190 | 1000 | 200 | WI-1 |
SGG100-12RS1 | |||||||||||
SGG100-12LS1 | |||||||||||
SGG150-12CS2 | 150 | 1200 | ±20 | 4.5-7.5 | 2500 | 150 | 150 | 300 | 1400 | 200 | WI-2 |
SGG150-12RS2 | |||||||||||
SGG150-12LS2 | |||||||||||
SGG200-12CS2 | 200 | 1200 | ±20 | 4.5-7.5 | 2500 | 150 | 200 | 400 | 1800 | 200 | WI-2 |
SGG200-12RS2 | |||||||||||
SGG200-12LS2 | |||||||||||
SGG300-12CS2 | 300 | 1200 | ±20 | 4.5-7.5 | 2500 | 150 | 300 | 600 | 2200 | 220 | WI-2 |
SGG300-12RS2 | |||||||||||
SGG300-12LS2 |
Document | Format | File Size |
SGG50 Outlines | 50.3 KB | |
SGG50 Spec Sheet | 277 KB |