Key Features

   High Thermal Conductivity             High Resistivity

   Thermal Expansion Coefficient close to that of Si          Low Dielectric Constant and Loss

   Inert to Almost All Molten Metals    Excellent Mechanical Strength

Applications

   Circuit Substrates for Semiconductor Module and IC

   Heatsink Materials for Power Transitors, Thyristors, LDs and LEDs etc.

   Crucibles for Molten Metal and Preparing Single Crystals

   Window Material for Infrared Ray and Radar

Aluminum Nitride (AlN)

Characteristics of Material

Technical Parameters	Unit	Value
Bulk Density	g/cm3	3.24 ~ 3.3
Thermal Expansion Coefficient	×10-6/℃	4.36 (at 20 ~ 400 ℃)
Modulus of Elasticity	GPa	310
Mohs Hardness		7 ~ 8
Fracture Toughness	MPam1/2	3.2 ~ 3.35
Vickers Hardness	GPa	12
Bending Strength	MPa	>325
Thermal Conductivity	W/m.K	170 ~ 228
Dielectric Constant (at1MHz )		8.6
Dielectric Loss Angle (at1MHz )	×10-4	5 ~ 10
Dielectric Strength	KV/mm	> 15
Volume Resistiity	Ωcm	> 3.6 × 1013

Metallized AlN Substraters

Item	Metallized Method
Material	Pd-Ag	W-Mo	Mo-Mn	Pt-Ag	Ti/Cu/Ni/Au	Ta2N/Ni	DCB
Feature	Thick Film	Thick Film	Thick Film	Thick Film	Thin Film	Thn Film	Direct Copper Bonded